FGA21
InGaAs Photodiode, 25 ns Rise Time, 800-1700 nm, Ø2 mm Active Area
InGaAs Photodiode, 25 ns Rise Time, 800-1700 nm, Ø2 mm Active Area
InGaAs Photodiode, 10 ns Rise Time, 900-1700 nm, Ø1 mm Active Area
InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area, FC/PC Bulkhead
InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø150 µm Active Area
InGaAs Photodiode, 300 ps Rise Time, 800-1700 nm, Ø0.12 mm Active Area
Si Photodiode, 150 ns Rise Time, 340 - 1100 nm, 10 mm x 10 mm Active Area
Si Photodiode, 65 ns Rise Time, 350 - 1100 nm, 10 mm x 10 mm Active Area
Si Photodiode, 10 ns Rise Time, 350 - 1100 nm, 3.6 mm x 3.6 mm Active Area
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